| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and the semiconductor device capable of forming at a low cost a resistive element of which the variation in resistance characteristic is small. SOLUTION: The manufacturing method of the semiconductor device includes a step of forming an SiGe layer on an Si substrate 1 in an SOI region, a step of forming an Si layer 13 on the SiGe layer, a step of forming the Si layer 13 and the SiGe layer in the profile of a resistive element in a top view, a step of forming sidewalls 17 on respective side surfaces of the Si layer 13 and the SiGe layer, a step of forming a groove 19 where the SiGe layer is exposed, and a step of forming a hollow part 21 between the Si layer 13 and the Si substrate 1 by etching the SiGe layer through the groove 19 in such a state that the side surface of the Si layer 13 is supported by the sidewalls 17. COPYRIGHT: (C)2011,JPO&INPIT
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