| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means of enhancing the crack resistance of a metal joint of a semiconductor device. <P>SOLUTION: The semiconductor device 100 includes a metal joint structure between a semiconductor element 10 and an insulative substrate 40. A first surface conductive layer 30 is provided on a first surface, on which the semiconductor element 10 is mounted, of the insulative substrate 40. The first surface conductive layer 30 has a central conductive region 32, with properties different from those of the peripheral region, in a portion corresponding to a central region, in a planar direction of the semiconductor element 10. The center conductive region includes a material having, for example, higher mechanical strength than that of the peripheral region. <P>COPYRIGHT: (C)2011,JPO&INPIT |
