| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is mounted in three dimensions at low cost by applying a separation process to what is called postprocessing. SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming a plurality of first integrated circuits 17 on the surface side of a first semiconductor substrate 11; forming a plurality of second integrated circuits 7 in a semiconductor layer 3 that is formed on a separation layer 2 provided on a second semiconductor substrate 1; bonding the two semiconductor substrates so that bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the separation layer to transfer, to the first semiconductor substrate 11, the semiconductor layer 3 in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate 11 to obtain stacked chips each including the first integrated circuit and the second integrated circuit. COPYRIGHT: (C)2011,JPO&INPIT |
