CHEMICAL MECHANICAL POLISHING METHOD, SEMICONDUCTOR DEVICE USING THE SAME, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING

摘要

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing method for evenly polishing a processing object with a wiring layer containing tungsten at a high speed. SOLUTION: The chemical mechanical polishing method includes: a first polishing process for chemically and mechanically polishing only a tungsten film by using a first aqueous dispersion for chemical mechanical polishing; a second polishing process for chemically and mechanically polishing the tungsten film, barrier metal film; and silicon oxide film simultaneously by using a second aqueous dispersion for chemical mechanical polishing. The first and second aqueous dispersions for chemical mechanical polishing contain at least (A) cationic water-soluble polymer, (B) an iron (III) compound, and (C) colloidal silica. A content ratio (MA1/MA2) of a content (MA1) [mass%] of the component (A) in the first aqueous dispersion for chemical mechanical polishing to a content (MA2) [mass%] of the component (A) in the second aqueous dispersion for chemical mechanical polishing is 0.004-0.3. COPYRIGHT: (C)2011,JPO&INPIT