| 摘要 |
PROBLEM TO BE SOLVED: To excellently embed a thin film into a recess formed on the surface of a substrate in forming the thin film by sequentially supplying at least two kinds of reactant gases reacting with each other in a vacuum chamber to the surface of the substrate on a rotation table and executing this supply cycle to laminate layers of a reaction product. SOLUTION: In the film depositing device, the rotation table 2 on which a wafer W is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer W a first reactant gas for allowing the first reactant gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reactant gas to produce an intermediate product having flowability, and a second reactant gas that reacts with the intermediate product to produce a reaction product are supplied to the surface of the wafer W in this order, and then the wafer W is heated by a heating lamp 210 in order to densify the reaction product. COPYRIGHT: (C)2011,JPO&INPIT |
