| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact semiconductor device which has high microphone sensitivity, and a manufacturing method therefor. SOLUTION: The semiconductor device is provided with: a conversion body 110 for converting sound pressure into an electrical signal; and an amplification element 140A which has an amplification circuit for amplifying the electrical signal converted by the conversion body 110. The conversion body 110 has a pedestal 112 formed with a cavity section 113 from a top surface to a bottom surface, and a vibrating film 111 which is arranged so as to plug the opening on the top surface side of the cavity section 113 and converts the sound pressure into the electrical signal by vibrating in response to the sound pressure. The amplification element 140A is arranged below the conversion body so as to plug the cavity section 113. COPYRIGHT: (C)2011,JPO&INPIT |
