发明名称 |
SEMICONDUCTOR DEVICE, DISPLAY DEVICE, ELECTRONIC EQUIPMENT, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can reduce the number of components as compared with a pior art, can be thinned and reduced in weight, and eliminates an influence of the presence or absence of a light-shielding layer to crystallinity since a semiconductor element provided on the light-shielding layer and suitable for such applications as a photosensor and a high-performance semiconductor element that can be driven speedily are mounted on the same substrate. SOLUTION: The semiconductor device includes a TFT 21 and a TFD 22 formed on an insulating substrate 1. The light-shielding layer 2 is selectively formed between the TFD 22 and the insulating substrate 1. Respective semiconductor layers 5, 6 in the TFT 21 and TFD 22 are formed of lateral growth crystals, and irregularities larger than the surface roughness of the TFT 21 are formed on the surface of the semiconductor layer 6 of the TFD 22. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2010245429(A) |
申请公布日期 |
2010.10.28 |
申请号 |
JP20090094843 |
申请日期 |
2009.04.09 |
申请人 |
SHARP CORP |
发明人 |
MIYAMOTO TADAYOSHI;SUGA KATSUYUKI |
分类号 |
H01L21/20;G02F1/1365;G02F1/1368;H01L21/336;H01L27/146;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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