发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
It is an object to provide an SGT production method capable of obtaining a structure for reducing a resistance of a gate, a desired gate length, desired source and drain configurations and a desired diameter of a pillar-shaped semiconductor. The object is achieved by a semiconductor device production method which comprises the steps of forming a pillar-shaped first-conductive-type semiconductor layer; forming a second-conductive-type semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a gate dielectric film and a gate electrode around the pillar-shaped first-conductive-type semiconductor layer; forming a sidewall-shaped dielectric film on an upper region of a sidewall of the pillar-shaped first-conductive-type semiconductor layer and in contact with a top of the gate; forming a sidewall-shaped dielectric film on a sidewall of the gate; and forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer and on the second-conductive-type semiconductor layer formed underneath the pillar-shaped first-conductive-type semiconductor layer.
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申请公布号 |
EP2244304(A1) |
申请公布日期 |
2010.10.27 |
申请号 |
EP20090710059 |
申请日期 |
2009.02.16 |
申请人 |
UNISANTIS ELECTRONICS (JAPAN) LTD. |
发明人 |
MASUOKA, FUJIO;ARAI, SHINTARO;NAKAMURA, HIROKI;KUDO, TOMOHIKO |
分类号 |
H01L29/786;H01L21/28;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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