发明名称 POWER UP CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A power up circuit of a semiconductor device is provided to prevent the malfunction of a circuit by including a discharge unit. CONSTITUTION: A reference voltage generating unit(110) divides power voltage. The reference voltage generating unit generates a reference voltage. A power up signal generating unit(120) uses the power voltage and the reference voltage. The power up signal generating unit generates the power up signal. A discharge unit(130) discharges the reference voltage.
申请公布号 KR20100115122(A) 申请公布日期 2010.10.27
申请号 KR20090033678 申请日期 2009.04.17
申请人 HYNIX SEMICONDUCTOR INC. 发明人 RYU, SEUNG HAN
分类号 G11C5/14;G11C7/10 主分类号 G11C5/14
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