发明名称
摘要 PROBLEM TO BE SOLVED: To enhance the yield of a semiconductor device. SOLUTION: By arranging a dam bar 1i close to the mold line at each corner of the cutting parts of a device region, a weight by a pinch-cut punch 7 can be applied only to the dam bar 1i outside the peripheral sealing part 3c of the sealing part 3 while a tab-suspending lead is cut off in a lead cutting step. Consequently, the peripheral sealing part 3c and the dam bar 1i can be mutually separated by exfoliation. As a result, generation of a crack in the backside face 3a of the main sealing part 3b or of the peripheral sealing part 3c can be prevented, and the yield of QFNs(quad flat non-leaded packages) can be enhanced.
申请公布号 JP4570797(B2) 申请公布日期 2010.10.27
申请号 JP20010036827 申请日期 2001.02.14
申请人 发明人
分类号 H01L23/28;H01L23/50;H01L21/56;H01L23/12 主分类号 H01L23/28
代理机构 代理人
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