PROCESS FOR PRODUCING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LASER ELEMENT AND GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LASER ELEMENT,申请号EP20060730796-传众专利搜索

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发明名称	PROCESS FOR PRODUCING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LASER ELEMENT AND GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LASER ELEMENT
摘要
申请公布号	EP1873880(A4)	申请公布日期	2010.10.27
申请号	EP20060730796	申请日期	2006.03.31
申请人	SANYO ELECTRIC CO., LTD.;TOTTORI SANYO ELECTRIC CO., LTD.	发明人	MATSUSHITA, YASUHIKO;NAKAZAWA, SHUUICHI
分类号	H01S5/343;H01L21/205	主分类号	H01S5/343
代理机构		代理人
主权项
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