| 摘要 |
PURPOSE: A method of programming a non volatile memory device is provided to prevent the disturbance in self boosting by controlling voltage level of a pass voltage applied to a word line. CONSTITUTION: A memory cell array comprises memory cells. Memory cells are connected to word lines and bit lines. A first voltage is applied to a K word line. A program voltage is applied to the K word line. A second voltage is supplied to a K-4 word line. A second voltage is lower than the first voltage. A third voltage is applied to the K-4 word line. |
