PROCESS FOR PREPARING SINGLE CRYSTAL SILICON USING CRUCIBLE ROTATION TO CONTROL TEMPERATURE GRADIENT

摘要

The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e.. G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.