| 摘要 |
<p>A method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film. The method for organic semiconductor material thin film formation is characterized in that, when the surface free energy of the surface of the substrate is gammaS=gammaSd+gammaSp+gammaSh (wherein gammaSd, gammaSp, and gammaSh each represent a non-polar component, a polar component, and a hydrogen bond component of the surface free energy of the solid surface based on the Young-Fowkes equation), and a surface free energy of a solvent in the aforesaid liquid is represented by gammaL=gammaLd+gammaLp+gammaLh (wherein gammaLd, gammaLp, and gammaLh each represent a non-polar component, a polar component, and a hydrogen bond component of the surface free energy of liquid based on the Young-Fowkes equation), gammaSh-gammaLh value is in the range of -5 to 20 (mN/m) and hydrogen bond component gammaSh is 0<gammaSh<20 (mN/m).</p> |
