发明名称 |
Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
摘要 |
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
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申请公布号 |
US7820511(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20070822568 |
申请日期 |
2007.07.06 |
申请人 |
SEMISOUTH LABORATORIES, INC. |
发明人 |
SANKIN IGOR;MERRETT JOSEPH NEIL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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