发明名称 Nonvolatile memory device and method including resistor and transistor
摘要 A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.
申请公布号 US7821809(B2) 申请公布日期 2010.10.26
申请号 US20050267825 申请日期 2005.11.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOO IN-KYEONG;LEE MYOUNG-JAE;SEO SUN-AE;SEO DAVID
分类号 G11C11/00 主分类号 G11C11/00
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