发明名称 |
Nonvolatile memory device and method including resistor and transistor |
摘要 |
A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.
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申请公布号 |
US7821809(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20050267825 |
申请日期 |
2005.11.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO IN-KYEONG;LEE MYOUNG-JAE;SEO SUN-AE;SEO DAVID |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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