发明名称 Method for manufacturing integrated circuit
摘要 A method for separating an integrated circuit formed by a thin film having a novel structure or a method for transferring the integrated circuit to another substrate, that is, so-called transposing method, has not been proposed. According to the present invention, in the case that an integrated circuit having a thin film having a novel structure formed over a substrate via a release layer is separated, the release layer is removed in the state that the thin film integrated circuit is fixated, the thin film integrated circuit is transposed to a supporting substrate having an adhesion surface, and the thin film integrated circuit is transposed to another substrate having an adhesion surface with higher strength of adhesion than that of the supporting substrate.
申请公布号 US7820529(B2) 申请公布日期 2010.10.26
申请号 US20050591700 申请日期 2005.03.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TSURUME TAKUYA;MARUYAMA JUNYA;DOZEN YOSHITAKA
分类号 H01L21/00;H01L21/02;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H05K3/20 主分类号 H01L21/00
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