发明名称 |
Semiconductor device and method of fabricating same |
摘要 |
There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (Vth) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby reducing the amount of hydrogen atoms migrating to a silicon-silicon oxide interface in a cell area and, accordingly, reducing the number of Si—H chemical bonds at the interface. |
申请公布号 |
USRE41866(E1) |
申请公布日期 |
2010.10.26 |
申请号 |
US20010891925 |
申请日期 |
2001.06.27 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YANO MITSUHIRO;MOCHIZUKI KOUICHI |
分类号 |
H01L29/74;H01L21/336;H01L23/31;H01L29/06;H01L29/40;H01L29/423;H01L29/739;H01L29/76;H01L29/78;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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