RESIST COMPOSITION AND PATTERNING PROCESS

摘要

PURPOSE: A resist material and a method for forming pattern using the same are provided to ensure excellent transparency to radiation of under 200nm of wave length. CONSTITUTION: A resist material contains: a polymer compound having repetitive unit of chemical formula 1; polymer compound which is soluble in alkali developing solution; compound generating acid by light exposure of high energy; and an organic solvent. In chemical formula 1, R1 is hydrogen or methyl group; R2 is straight, branched or cyclic alkylene group or fluorinated alkylene group of 1-15 carbon atoms; and R3 is straight, branched or cyclic fluorinated alkyl group of 1-15 carbon atoms.