发明名称 |
Nonvolatile memory device including circuit formed of thin film transistors |
摘要 |
A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.
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申请公布号 |
US7821829(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20090483710 |
申请日期 |
2009.06.12 |
申请人 |
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发明人 |
OGURA TAKU;YAMAUCHI TADAAKI;KUBO TAKASHI |
分类号 |
G11C11/34;G11C16/06;G11C7/02;G11C7/06;G11C11/14;G11C16/04;G11C16/12;G11C16/34;G11C29/00;G11C29/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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