| 摘要 |
A power semiconductor component and a method for producing such a component. The component comprises a semiconductor base body having a first doping. A pn junction is formed in the base body by a contact region having a second doping with a first doping profile. A field ring structure has a second doping with a second doping profile. The contact region and the field ring structure are arranged at respectively assigned first and second partial areas of a first surface of the base body. Both extend into the base body, wherein the base body has, for the field ring structure, a trench-type cutout assigned to each respective field ring, the surface of said cutout following the contour of the assigned doping profile.
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