发明名称 |
Method and apparatus for flatband voltage tuning of high-k field effect transistors |
摘要 |
In one embodiment, the invention is a method and apparatus for flatband voltage tuning of high-k field effect transistors. One embodiment of a field effect transistor includes a substrate, a high-k dielectric layer deposited on the substrate, a gate electrode deposited on the high-k dielectric layer, and a dipole layer positioned between the substrate and the gate electrode, for shifting the threshold voltage of the field effect transistor.
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申请公布号 |
US7821081(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20080133817 |
申请日期 |
2008.06.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GUHA SUPRATIK;NARAYANAN VIJAY;PARUCHURI VAMSI K. |
分类号 |
H01L29/76;H01L27/108;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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