发明名称 |
Predicting dose repeatability in an ion implantation |
摘要 |
An approach for predicting dose repeatability in an ion implantation is described. In one embodiment, an ion source is tuned to generate an ion beam with desired beam current. Beam current measurements are obtained from the tuned ion beam. The dose repeatability is predicted for the ion implantation as a function of the beam current measurements.
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申请公布号 |
US7820987(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20070961157 |
申请日期 |
2007.12.20 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
EVANS MORGAN;HUSSEY NORMAN E.;WALTHER STEVEN R.;PADMANABHAN REKHA |
分类号 |
A61N5/00;G21G5/00 |
主分类号 |
A61N5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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