发明名称 |
Method and system for testing semiconductor memory device using internal clock signal of semiconductor memory device as data strobe signal |
摘要 |
Provided are a method and system for testing a semiconductor memory device using an internal clock signal of the semiconductor memory device as a data strobe signal. The internally-generated data strobe signal may be delayed to synchronize with test data. Because a test device need not supply the data strobe signal, the number of semiconductor memory modules that can be simultaneously tested can be increased, and an average test time for a unit memory module can be decreased.
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申请公布号 |
US7823031(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20070781380 |
申请日期 |
2007.07.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUN-BAE;RYU JIN-HO;PARK SUNG-MAN |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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