发明名称 Method and system for testing semiconductor memory device using internal clock signal of semiconductor memory device as data strobe signal
摘要 Provided are a method and system for testing a semiconductor memory device using an internal clock signal of the semiconductor memory device as a data strobe signal. The internally-generated data strobe signal may be delayed to synchronize with test data. Because a test device need not supply the data strobe signal, the number of semiconductor memory modules that can be simultaneously tested can be increased, and an average test time for a unit memory module can be decreased.
申请公布号 US7823031(B2) 申请公布日期 2010.10.26
申请号 US20070781380 申请日期 2007.07.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JUN-BAE;RYU JIN-HO;PARK SUNG-MAN
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址