| 发明名称 |
Silicon electrode plate for plasma etching with superior durability |
| 摘要 |
This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.
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| 申请公布号 |
US7820007(B2) |
申请公布日期 |
2010.10.26 |
| 申请号 |
US20050599440 |
申请日期 |
2005.03.30 |
| 申请人 |
SUMCO CORPORATION;MITSUBISHI MATERIALS CORPORATION |
发明人 |
FUJIWARA HIDEKI;IKEZAWA KAZUHIRO;TAGUCHI HIROAKI;IWAMOTO NAOFUMI;ISHII TOSHINORI;KOMEKYU TAKASHI |
| 分类号 |
H01L21/00;H01L21/3065;H01J37/32;H05H1/46 |
主分类号 |
H01L21/00 |
| 代理机构 |
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