Semiconductor layer structure with superlattice

摘要

A semiconductor layer structure comprises a superlattice composed of alternately stacked layers of III-V semiconductor compounds of a first composition and at least one second composition. The layers of the superlattice contain dopants in predetermined concentrations, with regard to which the concentrations of the dopants are different at least two layers of a same composition in the superlattice, the concentration of the dopants is graded within at least one layer of the superlattice, and the superlattice comprises layers that are doped with different dopants or comprise at least one layer that is undoped.