发明名称 |
Method of fabricating a flash memory and an isolating structure applied to a flash memory |
摘要 |
A method of fabricating a flash memory and an isolating structure applied to a flash memory is provided. The feature of the method lies in a T-shaped shallow trench isolation (STI). The T-shaped STI has a widened cap covering on a substrate and a tapered bottom embedded in the substrate. The widened cap of the T-shaped STI can provide a high process widow when fabricating the floating gate wings, and the product yield will thereby be increased.
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申请公布号 |
US7820510(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20090404349 |
申请日期 |
2009.03.16 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WANG SHEN-DE;WEN TZENG-FEI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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