发明名称 Optical sensor, solid-state imaging device, and operating method of solid-state imaging device
摘要 In an optical device such as an optical sensor or a solid-state imaging device having a photodiode for receiving light and producing photocharges and a transfer transistor (or an overflow gate) for transferring the photocharge, it is configured that photocharges overflowing from the photo diode in storage operation are stored into a plurality of storage capacitance elements through the transfer transistor or the overflow gate, thereby obtaining the optical device adapted to maintain a high sensitivity and a high S/N ratio and having a wide dynamic range.
申请公布号 US7821560(B2) 申请公布日期 2010.10.26
申请号 US20060887916 申请日期 2006.04.06
申请人 TOHOKU UNIVERSITYU 发明人 SUGAWA SHIGETOSHI;AKAHANE NANA
分类号 H04N3/14;H04N5/355;H04N5/374;H04N5/3745 主分类号 H04N3/14
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