发明名称 |
Optical sensor, solid-state imaging device, and operating method of solid-state imaging device |
摘要 |
In an optical device such as an optical sensor or a solid-state imaging device having a photodiode for receiving light and producing photocharges and a transfer transistor (or an overflow gate) for transferring the photocharge, it is configured that photocharges overflowing from the photo diode in storage operation are stored into a plurality of storage capacitance elements through the transfer transistor or the overflow gate, thereby obtaining the optical device adapted to maintain a high sensitivity and a high S/N ratio and having a wide dynamic range.
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申请公布号 |
US7821560(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20060887916 |
申请日期 |
2006.04.06 |
申请人 |
TOHOKU UNIVERSITYU |
发明人 |
SUGAWA SHIGETOSHI;AKAHANE NANA |
分类号 |
H04N3/14;H04N5/355;H04N5/374;H04N5/3745 |
主分类号 |
H04N3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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