| 发明名称 |
Integrated III-nitride devices |
| 摘要 |
A III-nitride heterojunction semiconductor device that includes a power electrode that is electrically connected to a conductive substrate through a trench in the heterojunction thereof.
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| 申请公布号 |
US7821034(B2) |
申请公布日期 |
2010.10.26 |
| 申请号 |
US20070650835 |
申请日期 |
2007.01.08 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BEACH ROBERT;BRIDGER PAUL |
| 分类号 |
H01L21/337 |
主分类号 |
H01L21/337 |
| 代理机构 |
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代理人 |
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| 主权项 |
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