| 摘要 |
A composite differential Radio Frequency (RF) power amplifier includes a plurality of differential RF cascode power amplifiers coupled in parallel. Each differential RF cascode power amplifier includes a positive transconductance stage and a positive cascode stage coupled in series with the positive transconductance stage between a voltage node and ground. Each also includes a negative transconductance stage and a negative cascode stage coupled in series with the negative transconductance stage between the voltage node and ground. The plurality of parallel differential RF cascode power amplifiers resides adjacent one another in a single semiconductor substrate such that the positive transconductance stage of a first differential RF cascode power amplifier resides adjacent a negative transconductance stage of a second differential RF cascode power amplifier and the positive cascode stage of the first differential RF cascode power amplifier resides adjacent a negative cascode stage of a second differential RF cascode power amplifier.
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