发明名称 |
Method for growing thin nitride film onto substrate and thin nitride film device |
摘要 |
The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1), the Ga face (2) growing in +c face, and the N face (3) growing in −c face.
|
申请公布号 |
US7820246(B2) |
申请公布日期 |
2010.10.26 |
申请号 |
US20040562265 |
申请日期 |
2004.06.15 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
SUMIYA MASATOMO;FUKE SHUNRO |
分类号 |
H01L21/76;C30B25/02;C30B25/18;C30B29/40;H01L21/205;H01L33/16;H01L33/32 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|