SEPARATION METHOD OF SEMICONDUCTOR DEVICE FROM SUBSTRATE

摘要

PURPOSE: A method of separating a semiconductor device from a substrate is provided to manufacture a high power LED by growing an optical device including GaN series on a sapphire substrate. CONSTITUTION: In a method of separating a semiconductor device from a substrate(100), the semiconductor device includes a first semiconductor region(120) of n-GaN series and a second semiconductor region(240) of n-GaN. The semiconductor devices are arranged on the second substrate. Electrolytic etching is performed by using the first and second substrate as an anode and using an electrolyte as a cathode. The etch concentrations in the first and second semiconductor region are differently controlled and the second semiconductor region is removed, and then the semiconductor device is separated from the substrate.