发明名称 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING PATTERN THEREWITH
摘要 To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same. A resist composition for negative tone development, comprising (A) a resin capable of increasing the polarity by the action of an acid to increase the solubility in a positive tone developer and decrease the solubility in a negative tone developer, (B) a compound capable of generating an acid having an acid dissociation index pKa of -4.0 or less upon irradiation with an actinic ray or radiation, and (C) a solvent; and a pattern forming method using the same.
申请公布号 KR100989565(B1) 申请公布日期 2010.10.25
申请号 KR20097025824 申请日期 2008.06.12
申请人 发明人
分类号 G03F7/004;G03F7/038;G03F7/039;H01L21/027 主分类号 G03F7/004
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