发明名称 METHOD For PRODUCING POLYCRYSTALLINE SILICON INGOTS by induction method and device for realization thereof
摘要 A method for producing polycrystalline silicon ingots by induction method involves melting and casting in the form of melting space, crystallization of ingot of polycrystalline silicon and its controlled cooling using a set of heating means, after termination of melting and casting the melt the crystallization of the part of polycrystalline silicon ingot is ended, remaining at the controlled cooling the entire ingot, and the specified ingot of polycrystalline silicon is moved with the movable bottom and the set of heating means and a set of heating and continue controlled cooling thereof, and at the available place another set of heating means is simultaneously supplied, in which another movable bottom is displaced, then referred the other movable bottom is moved to the water-cooled crucible and the repeat of operations is started for the producing the following ingots and device for the producing of polycrystalline silicon ingot by the induction method, which includes the chamber, in which the water-cooled crucible is set, included to the inductor, means of starting heating of the lump silicon charge, platform, set in the department of the controlled cooling, made with the possibility of rotation around the axis on which at least two sets of heating are set.
申请公布号 UA92392(C2) 申请公布日期 2010.10.25
申请号 UA20080014479 申请日期 2008.12.15
申请人 &ldquo,PILLAR&rdquo, CLOSED JOINT-STOCK COMPANY;&ldquo,TESYS&rdquo, LIMITED LIABILITY COMPANY;SILISIO SOLAR S.A.U. 发明人 BERINHOV SERHII BORYSOVYCH;ONISCHENKO VOLODYMYR YEVHENOVYCH;SHKULKOV ANATOLII VASILIIEVICH;CHERPAK YURII VOLODYMYROVYCH;POZIHUN SERHII ANATOLIIOVYCH;MARCHENKO STEPAN ANATOLIIOVYCH;SHEVCHUK ANDRII LEONIDOVYCH
分类号 C30B29/06;B22D11/08 主分类号 C30B29/06
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