发明名称 |
LAMINATE AND PROCESS FOR PRODUCING THE LAMINATE |
摘要 |
The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800 °C in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600 °C, for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600 °C in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature. |
申请公布号 |
KR20100114518(A) |
申请公布日期 |
2010.10.25 |
申请号 |
KR20107017712 |
申请日期 |
2009.01.09 |
申请人 |
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY;TOKUYAMA CORPORATION |
发明人 |
KOUKITU AKINORI;KUMAGAI YOSHINAO;ISHIZUKI MASANARI;NAGASHIMA TORU;HAKOMORI AKIRA;TAKADA KAZUYA |
分类号 |
C30B29/38;C30B25/18;H01L21/02 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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