| 摘要 |
<p>PURPOSE: A method of manufacturing a reflective type mask and a reflective type mask blank is provided to implement high resolution pattern on a substrate. CONSTITUTION: A reflective-type blank and a method of manufacturing thereof includes a substrate(1), a multilayer reflection film(2), and an absorber layer(4). The multilayer reflects exposure light which is formed on the substrate. The absorber layer absorbs the exposure light which is formed on the multilayer reflection film. An EUV light is used an EUV lithography. The absorber layer is formed with a material formed with a tantalum(Ta) and has the density of a thin film of 6.0-16.0g/cm^3.</p> |
