发明名称 APPARATUS AND METHOD FOR PLASMA ION DOPING
摘要 PURPOSE: An apparatus and a method for plasma ion doping are provided to stably perform a doping process inside a process chamber by including an electronic induction member. CONSTITUTION: An apparatus and a method for plasma ion doping include a processing chamber(10), a source, a platen(12), an injection pulse source, and an electromagnetic induction member. The source generates the plasma within the processing chamber. The platen supports the substrate within the processing chamber. The injection pulse source accelerates the ions within the plasma to the substrate. An electromagnetic induction member induces electrons.
申请公布号 KR20100114188(A) 申请公布日期 2010.10.25
申请号 KR20090032601 申请日期 2009.04.15
申请人 LIGADP CO., LTD. 发明人 YOUN, JONG WEON;JEONG, JIN YEOL
分类号 H01L21/205;H01L21/265;H01L21/3065 主分类号 H01L21/205
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