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发明名称
PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIVE OXIDE GROWTH
摘要
申请公布号
KR20100114503(A)
申请公布日期
2010.10.25
申请号
KR20107016368
申请日期
2008.12.18
申请人
APPLIED MATERIALS, INC.
发明人
YANG HAICHUN;LU XIN LIANG;KAO CHIEN TEH;CHANG MEI
分类号
H01L21/302;H01L21/3065
主分类号
H01L21/302
代理机构
代理人
主权项
地址
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