| 摘要 |
PURPOSE: A semiconductor memory apparatus driven by various driving voltages is provided to increase area efficiency by using selectively an inner circuit according to the level change of driving voltage. CONSTITUTION: An automatic first driving voltage selection buffer(200) buffers a deep power down signal according to a driving voltage selection signal. The automatic first driving voltage selection buffer generates a first internal deep power down signal. An automatic second driving voltage selection buffer(300) buffers an external deep down signal and generates a second internal deep power down signal. A selection output unit(400) outputs a deep power down entry signal. |
