| 摘要 |
PURPOSE: A circuit for generating internal voltage in a semiconductor memory apparatus is provided to suppress leakage current by controlling the threshold voltage of a switching transistor. CONSTITUTION: A bulk controller(10) detects an active mode. The bulk controller controls the level of a switching bulk voltage. A voltage generating unit(20) receives a reference voltage and an external power. The voltage generating unit generates an internal voltage. The voltage generating unit control the threshold voltage of the switching transistor by using the switching bulk voltage. |
