| 摘要 |
PURPOSE: A multi-level fuse box structure of the semiconductor memory device arranges the fuse line of many numbers than the unit area of the limited fuse box. CONSTITUTION: The fuse box(400) is formed in the fixed region of the semiconductor substrate(100). In fuse box, a plurality of first fuse lines(200) is arranged the first. In fuse box, a plurality of second fuse lines(300) is arranged the second. In the fuse box outer-most, the guard ring [guard ring] is formed.
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