| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus capable of preventing crack of a substrate in irradiation of a flash light from a flash lamp. SOLUTION: When a flash light is emitted from a flash lamp FL to execute heat treatment, a holding section 7 for holding a semiconductor wafer W in a horizontal posture is configured by installing a susceptor 72 on a hot plate 71 having a built-in heater. A groove 79 is circularly formed along the circumferential edge of the semiconductor wafer W on a bottom surface 78a of a concave portion 78 of the susceptor 72, and the lower portion of the circumferential edge is made to be an open space. When the semiconductor wafer W is warped in convex shape due to a sudden thermal expansion on the surface at the moment of flash light emission from the flash lamp, the circumferential edge of the wafer W can freely move, so that a strong stress does not act on the semiconductor wafer W to prevent crack of the semiconductor wafer W. COPYRIGHT: (C)2011,JPO&INPIT
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