| 摘要 |
PROBLEM TO BE SOLVED: To provide a dislocation controlling seed crystal and a production method of the seed crystal that has little possibility of inducing a defect in a SiC single crystal during growing, and to provide a production method of a SiC single crystal. SOLUTION: The dislocation controlling seed crystal 10, the method for producing the seed crystal, and the production method of a SiC single crystal using the seed crystal are configured as follows. (1) The dislocation controlling seed crystal 10 comprisesα-type SiC. (2) The dislocation controlling seed crystal 10 has a growing face having an offset angleθof 1°or larger and 15°or smaller. (3) The growing face includes a high quality region 12 having a low screw dislocation density and a screw dislocation region 14 having an area of not more than 50% of the growing face. (4) The screw dislocation region 14 is prepared by forming a receding part for forming the screw dislocation region 14 in a part of a primary growing face of a primary seed crystal to be the high quality region 12, preliminarily growing a SiC single crystal at least in the receding part so as to include the screw dislocation region 14 in a c-end in the offset direction of the growing face, and mirror-polishing the surface of the primary seed crystal to expose the growing face. COPYRIGHT: (C)2011,JPO&INPIT
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