METHOD FOR MEASURING ELECTRICAL CHARACTERISTICS OF SEMICONDUCTOR SUBSTRATE

摘要

Provided is a method for measuring a leak current or a dielectric breakdown voltage due to transfer of holes or electrons in a semiconductor substrate which includes a base substrate and a buffer layer, specifically, a method for measuring a leak current or a dielectric breakdown voltage in a semiconductor substrate having a base substrate and a buffer layer provided on the base substrate. The method is provided with: a step of providing the buffer layer with a plurality of electrodes, including a hole injection electrode composed of a material which injects holes to the buffer layer when an electrical field is applied; a step of measuring a current flowing in a pair of first electrodes, which are selected from among the electrodes and include at least one hole injection electrode, and a voltage between the pair of first electrodes, in the case where a voltage or a current is applied to the pair of first electrodes; and a step of measuring a leak current or a dielectric breakdown voltage due to the hole transfer in the semiconductor substrate, based on the current flowing in the pair of first electrodes and the voltage between the pair of first electrodes.