| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high purity polycrystalline silicon ingot from polycrystalline silicon which is produced by a zinc reduction method and subsequently taken out to the outside of a reaction apparatus. SOLUTION: The method for producing a polycrystalline silicon ingot includes: a melting step of melting polycrystalline silicon produced by a zinc reduction method, under the pressure of not more than 10<SP>-1</SP>Pa at 1,410 to 1,600°C while supplying argon gas containing water vapor to the environment to obtain molten silicon; and a cooling step of successively cooling the molten silicon successively from a lower part to an upper part to crystallize to obtain a polycrystalline silicon ingot. COPYRIGHT: (C)2011,JPO&INPIT |
