| 摘要 |
PROBLEM TO BE SOLVED: To prevent malfunction that occurs by parasitic NPN transistors, when a source terminal of an N channel DMOSFET is negatively biased, in a semiconductor device in which a plurality of elements containing the N channel DMOSFET are formed on a common P-type semiconductor substrate. SOLUTION: The semiconductor device 40 has a P-type semiconductor substrate 21, a plurality of n-type wells 22-24 formed on the P-type semiconductor substrate 21, and the N channel DMOSFET 31 formed on at least one n-type well 22 in the plurality of n-type wells 22-24. The potential of the P-type semiconductor substrate 21 is biased in negative potential -Ege, so as to be kept below the potential of the n-type well 22 in which the N channel DMOSFET 31 is formed. COPYRIGHT: (C)2011,JPO&INPIT
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