发明名称 METHOD OF PROCESSING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a process of processing a semiconductor wafer, by which back surface grinding of the semiconductor wafer having large unevenness is facilitated, the wafer is easily divided into individual chips and a sheet can be peeled without incurring any problem of remaining paste. SOLUTION: A sheet 20 for surface protection is stuck on a circuit surface 10S, and a half-cut groove 10K is formed by carrying out half-cut dicing on the wafer 10 from the side of the sheet 20 for surface protection. A sheet 30 for grinding is put over and stuck on the sheet 20 for surface protection, and the back surface of the wafer 10 is ground. After the wafer 10 is divided into individual chips 18 through the grinding, the sheet side is irradiated with ultraviolet light to cure the sheet 20 for surface protection. Further, the sheet 20 for surface protection 20 is heated to shrink and then peeled after decreasing an area of contact with the individual chip 18. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010239030(A) 申请公布日期 2010.10.21
申请号 JP20090087267 申请日期 2009.03.31
申请人 LINTEC CORP 发明人 KANAI MICHIO;MAEDA ATSUSHI;SATO AKINORI
分类号 H01L21/301;H01L21/304 主分类号 H01L21/301
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