| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor for stable and continuous flow of large current. SOLUTION: A field-effect transistor 10 includes a source 18s and a drain 18d formed in a surface region of a semiconductor active layer 13 comprising a group III nitride semiconductor, a gate electrode 15 formed on the semiconductor active layer 13 through a gate oxide film 14, and a passivation film 20 formed on the semiconductor active layer 13 between the gate electrode 15 and the drain 18d. Relating to the field-effect transistor 10, the density of film quality of silicon dioxide constituting the passivation film 20 is rougher than that of silicon dioxide constituting the gate oxide film 14. COPYRIGHT: (C)2011,JPO&INPIT |
