发明名称 Methods for high temperature processing of epitaxial chips
摘要 High temperature semiconducting materials in a freestanding epitaxial chip enables the use of high temperature interconnect and bonding materials. Process materials can be used which cure, fire, braze, or melt at temperatures greater than 400 degrees C. These include, but are not limited to, brazing alloys, laser welding, high-temperature ceramics and glasses. High temperature interconnect and bonding materials can additionally exhibit an index of refraction intermediate to that of the freestanding epitaxial chip and its surrounding matrix. High index, low melting point glasses provide a hermetic seal of the semiconductor device and also index match the freestanding epitaxial chip thereby increasing extraction efficiency. In this manner, a variety of organic free semiconducting devices, such as solid-sate lighting sources, can be created which exhibit superior life, efficiency, and environmental stability.
申请公布号 US2010264452(A1) 申请公布日期 2010.10.21
申请号 US20090589056 申请日期 2009.10.16
申请人 GOLDENEYE, INC. 发明人 ZIMMERMAN SCOTT M.;BEESON KARL W.;LIVESAY WILLIAM R.
分类号 H01L29/20;H01L21/20;H01L31/0304;H01L33/30 主分类号 H01L29/20
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