The invention relates to an organic memory element comprising an organic semiconductor material, a gate dielectric stack comprising a first dielectric layer acting as a barrier layer and a second dielectric layer of an organic material, and a gate electrode. The gate electrode is separated from the second dielectric layer through the barrier layer. For programming charge carriers are injected into the second dielectric layer by application of a programming pulse of a first voltage to the gate electrode to cause a shift of the threshold voltage. For erasing, an erasing pulse of a second voltage with opposite polarity to the first voltage is applied to the gate electrode to cause an opposite shift of the transistor threshold voltage to the OFF state threshold voltage. The organic semiconductor material is an ambipolar organic semiconductor material.
